• No results found

Doping of high-Al-content AlGaN grown by MOCVD

N/A
N/A
Protected

Academic year: 2021

Share "Doping of high-Al-content AlGaN grown by MOCVD"

Copied!
2
0
0

Loading.... (view fulltext now)

Full text

(1)

2014

Doping of high-Al-content AlGaN

grown by MOCVD

Daniel Nilsson

Linköping Studies in Science and Technology Dissertation No. 1597 D ani el N ils so n D op in g o f h ig h-Al -co nte nt Al G aN g ro w n b y M O C VD

(2)

Linköping Studies in Science and Technology No. 1597, 2014 The Department of Physics Chemistry and Biology

Semiconductor Materials 581 83 Linköping Sweden www.liu.se 2014 D ani el N ils so n D op in g o f h ig h-Al -co nte nt Al G aN g ro w n b y M O C VD

References

Related documents

The results obtained for class-E power amplifier using GaN HEMT are; the power added efficiency (PAE) of 70 % with a gain of 13.0 dB at an output power of 43.0 dBm,

Synthesis of Oligosaccharides as Orthogonal Spacers and for S elf -assembly M onolayers Timmy F yrner.

Drawing on postsocialist, postcolonial, queer and feminist visual culture studies, the author argues that Treumund’s art is always already embedded in the local context, as it

1994, "The promoter of the barley aleurone-specific gene encoding a putative 7 kDa lipid transfer protein confers aleurone cell-specific expression in transgenic rice",

The mechanism of the coupling between the mass and charge transfer in electrochemical systems, and particularly in conductive polymer based system, is highly

Most of these cases however, stem from large enterprises or IT-intensive small or medium-sized enterprises (SME). The current ontology development methodologies are not tailored

The lattice parameters, structural and optical properties of true-bulk, homoepitaxial and heteroepitaxial AlN material grown at high process temperatures of up to 1400 °C

The studies presented in this thesis are part of a body of research in Resilience Engineering (RE) that in the past decade has developed theories, methods and models, and