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Electrical characterization of graphene devices

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Project Title: Electrical characterization of graphene devices

Motivation: Graphene is a single atom thick layer of carbon atoms arranged in a honeycomb lattice (Figure 1a), that due to its unique band structure, exhibits outstanding optical, magnetic and electrical properties. Near the Dirac points the band structure looks like, the one shown in Figure 1b. The linear dispersion relation leads the charge carriers in graphene to behave like massless fermions, and this, along with its gate voltage tunability is what makes graphene such an interesting material with so many possible applications, from graphene field effect transistors (GFETs) to bio-sensing devices. In particular the focus of our group is in Spintronics, in which graphene excels and several practical applications have been proposed, as spin memristors which could revolutionize electronic memory hardware, and spin transistors that could also be used towards more efficient electronics, and memory hardware.

In this project, we aim to follow the process through which graphene spin devices are prepared from CVD graphene, patterned using optical lithography and contact fabrication by EBL followed by electron beam evaporation. We then aim to characterize the electrical properties of samples: the I-V characteristics and carrier mobility to assess the quality of samples. Our primary focus will be on determining the current-carrying capacity. This will enable us to determine the importance of the graphene based device for spintronic and nanoelectronic applications.

The timelines of the project has three phases

1. Learn measurement in the laboratory in already prepared graphene devices, and get some measurements and obtain data.

Figure : a) Graphene honeycomb lattice b) Graphene band structure, we can see the linear dispersion relation around the Dirac point

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2. Follow the process of fabrication in cleanroom and participate in some steps.

3. In the third phase, perform data analysis to evaluate the electrical properties of graphene devices and the current limits.

During the three phases, writing these parts for thesis is done.

References

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