• No results found

Polarization-resolved photoluminescence spectroscopy of III-nitride quantum dots

N/A
N/A
Protected

Academic year: 2021

Share "Polarization-resolved photoluminescence spectroscopy of III-nitride quantum dots"

Copied!
1
0
0

Loading.... (view fulltext now)

Full text

(1)

Linköping Studies in Science and Technology Dissertation No. 1494

Linköping Studies in Science and Technology, Dissertation No. 1494, 2013 Semiconductor Materials

Department of Physics, Chemistry and Biology SE-58183 Linköping, Sweden

www.liu.se

Supaluck Amloy

Polarization-resolved photoluminescence spectroscopy of III-nitride quantum dots

2013

Polarization-resolved

photoluminescence

spectroscopy

of III-nitride

quantum dots

Supaluck Amloy

References

Related documents

The envelope wavefunctions in symmetric QW, QWR and QD confinement potentials (e.g. In this case, the non-vanishing matrix elements correspond to the

Investigated materials were grown using magnetron sputtering epitaxy and metal organic chemical vapour deposition and studied by Rutherford backscattering

These properties make direct band gap semiconductors important for light emitting devices, whereas for devices that absorb light, such as solar cells, an indirect band gap

1867, 2017 Department of Physics, Chemistry and Biology. Linköping University SE-581 83

for both electrons and holes. To be able to keep the charges confined in the quantum dot for higher temperatures a deep confinement is needed to prevent the charges to escape from

Accordingly, an even higher polarization degree (~ 73 %) is measured for the positively charged exciton. In a different study, pyramidal QD structures were employed. In contrast to

Department of physics, chemistry and biology

LIU-TEK-LIC-2011:17 Semiconductor Materials Division Department of Physics, Chemistry and Biology. Linköping University SE-581 83