C U R R I C U L U M V I T A E Sture Petersson
OFFICE ADDRESS Department of Electronics
Royal Institute of Technology Electrum 229
164 40 Kista Sweden
Telephone: (+46) 8 - 752 1401 Telefax: (+46) 8 - 752 7782 GSM (+46) 70 570 66 01 E-mail: spe@ele.kth.se
HOME ADDRESS Sandmovägen 5B
756 47 Uppsala Sweden
Telephone: (+46) 18 – 30 25 82 Telefax: (+46) 18 – 30 25 81
BIOGRAPHICAL DATA Born: Sept. 6 1941
Place: Lövånger
Married: Wife Viveka Vidmark-Petersson
Children: Jenny (1974), Åsa (1985)
ACADEMIC DEGREES
”Docent” in Electronics at Uppsala University (1974)
Ph.D. in Electronics at Uppsala University, Sweden (1973)
”Filosofie Licenciat” in Electronics Uppsala University (1970)
Diploma Engineer (Civ. ing.examen i Teknisk fysik) Uppsala University (1969)
M.Sc. degree at Uppsala University (1965)
Member in Societies
MRS (Materials Research Society)
IEEE
ECS (Electrcochemical Society)
APS ( American Physical Society)
AVS (American Vacuum Society)
Böhmische Physical Society
ACADEMIC POSITIONS
1999 - present
Dean ”Vice Rektor” at Mid Sweden University 1998 - present
Professor in Electronics at KTH and Mid Sweden University (50/50) 1983 – present
Full professor in Solid State Electronics at Royal Inst. of Technology (KTH), Stockholm.
1984 – 1998
Department head (prefekt) at department of Electronics, KTH
INTERNATIONAL ACTIVITIES 1991
Guest professor at IMEC, Leuwen, Belgium. One academic year 1990-1991 1982
Guest Scientist at IBM, Yorktown Heights USA for 5 months.
1980
Guest Scientist at Caltech (Prof Jim Mayer and Prof. Marc Nicolet) 1 mo.
1978-1980
Guest Scientist at IBM, Yorktown Heights USA for 26 mo.
1972
Research visitor at Kernforschungsanlage (KFA) Karlsruhe (Prof. Otto Meyer) 3 mo.
Misc.
Has published about 200 scientific papers in refereed journals.
Has chaired a number of international conferences, and has been and is member of several program committees of int. Conferences.
Patents:
US patent 4837174 Method for producing thin conducting and semiconducting layers in mono-crystalline silicon.
US patent 4740484 Method in the manufactor of integrated circuits Patent applications
Svensk patentans. Bildelementdetektor för röntgen (9900181-0)
Svensk patentans. Integrerad detektor (9601235-6) även europeisk ans och int. Ansökan (97916687.3 , PCT/SE97/00475 in USA)
SELECTED PUBLICATIONS (1997-1999)
Observera att vissa publikationer återkommer under flera namn
Publications with Aliette Mouroux
1 Enhancement of the formation of the C54 phase of TiSi2 through the introduction of an interposed layer of tantalum, A. Mouroux, S.-L.
Zhang and C. S. Petersson, Phys. Rev. 56 (1997) p.10614.
2 Advances in the formation of C54-TiSi2 with an interposed refractory metal layer: some properties, A. Mouroux, W. Kaplan, S.-L. Zhang and C. S. Petersson, Microelectronic Engineering 37/38 (1997) p.449.
3 A self-Aligned silicide technology with the Mo/Ti bilayer system, W.
Kaplan, A. Mouroux, S.-L. Zhang and C. S. Petersson, Microelectronic Engineering 37/38 (1997) p.461.
4 An experimental study of chemical vapour deposition of tungsten on Ti/TiN adhesion bilayers: mechanical properties, A. Mouroux, S.-L.
Zhang, C.S. Petersson, R. Palmans, K. Maex, T. Ahlgren and J. Keinonen, Surface and Coating Technology 99/3, 274 (1998).
Publication with Hans-Erik Nilsson
1. Hans-Erik Nilsson, Thomas Andersson, Ulf Sannemo, C Sture Petersson,
"An Investigation of the blocking characteristics of the Permeable Base Transistor", Solid-State Electronics, Vol. 42, No. 2. Mars 1998
2. C. Fröjdh, H-E. Nilsson, P. Nelvig, C Sture Petersson, "Simulation of the X-ray Response of Scintillator Coated Silicon CCDs", Ieee transactions on nuclear science, Vol. 45, No. 3. Juni, 1998
3. M. Hjelm, H-E. Nilsson, E. Dubaric, P. Käckell, C. S. Petersson, "Full Band Monte Carlo simulation of a 100nm 4H-SiC high frequency MOSFET", Inst. Phys. Conf. Ser. No 162, Chapter 5, pp. 273-278, 1998 4. M. Hjelm, H-E. Nilsson, P. Käckell, C.Persson, U. Sannemo, C. S.
Petersson, "A study of the anisotropic electron transport in 4H and 6H silicon carbide by Monte Carlo simulation", Physica Scripta, Vol. T79, p.
42, 1999
5. E. Dubaric, H-E. Nilsson, C. S. Petersson, "Numerical modelling of the floating body enhanced breakdown in ultra small non-fully depleted SOI MOSFETs", Physica Scripta, Vol. T79, p. 311, 1999
6. C. Fröjdh, G. Thungström, H-E. Nilsson, C. S. Petersson, "Schottky barriers on 6H-SiC", Physica Scripta, Vol. T79, p. 297, 1999
7. M. Hjelm, H-E. Nilsson, E. Dubaric, C. Persson, P. Käckell, C. S.
Petersson, "Full Band Monte Carlo Simulation of Short Channel MOSFETs in 4H and 6H-SiC", Proceedings of the MRS 1999 Spring Meeting, San Francisco, 1999
8. E. Bellotti, H-E. Nilsson, K. F. Brennan, "Ensemble Monte Carlo
calculation of hole transport in bulk 3C-SiC", J. Appl. Phys., Vol. 85, No.
6, Mars 1999
9. H-E. Nilsson, M. Hjelm, C. Fröjdh, C. Persson, U. Sannemo, C. S.
Petersson, “Full Band Monte Carlo simulation of electron transport in 6H-SiC”, J. Appl. Phys., Vol. 86, No. 2, 1999
10. E. Dubaric, M. Hjelm, H-E. Nilsson, C. S. Petersson, P. Käckell, “The Effect of Different Transport Models in Simulations of a 4H-SiC Ultra Short Channel MOSFET”, to be published in the proceedings of ICM’99
Publications with Mou Duan
1 Fabrication and Properties of Metal/Ferroelectrics/Semiconductor diodes on 4H SiC. ( D. Mou, C. S: Petersson, J. Linnros and K. V. Rao ), Appl.
Phys. Lett. 73(1998)1532.
2 Ferroelectric Films Prepared by Laser Ablation Directly on SiC Substrates. (D. Mou, J. Linnros, C. S: Petersson and K. V. Rao), J. Appl.
Phys. 84(1998)5785.
3 Electrical Properties of Epitaxial PTO/YBCO Heterostructures (D. Mou, J. Linnros, C. S: Petersson, and K. V. Rao), Physica C , 308(1998)221.
4 Magnetic Memory Effect in YBa2Cu3O7-x/(BiDy)3(FeGa)5O12. (D. Mou, A. M. Grishin and K. V. Rao) J. Appl. Phys. 83(1998)7327.
5 Deposition of Scintillating Layers of Bismuth Germanate (BGO) Films for X-ray Detector Applications. ( D. Mou, C. Fröjdh, G. Thungström, L.
W. Wang, J. Linnros and C. S. Petersson ) IEEE Trans. on Nuclear Science. 45(1998)525.
6 Properties of PTO/YBCO Heterostructure on Bare SiC Substrates. ( D.
Mou, J. Linnros, C. S. Petersson and K. V. Rao) Mat. Res. Soc. Symp.
Proc. Vol.493, (1998)499.
7 Metal/Ferroelectrics/Semiconductor (MFS) Diodes on SiC for Irradiation Hard Memory Applications. (D. Mou, C. S. Petersson, J. Linnros and K.
V. Rao) ISDRS-97, Charlottesville, Dec. 1997.
Publications with Christer Fröjdh
1. V. Aubry-Fortuna, J. L. Perossier, M. Mamor, F. Meyer, C. Fröjdh, G.
Thungström, C. S. Petersson, S. Bodnar, J. L. Regolini, What is the role of the metal on the Fermi-level position at the interface with IV-IV compounds?, Microelectronic Engineering, 37/38, 1997.
2. C. Fröjdh, Q. Wahab, M. Willander, C. S. Petersson and G. Holmén, 6H-SiC Material Used for UV Photodiodes. Presented at 15th Nordic Semiconductor Meeting, Hämeenlinna, Finland June 1992.
3. C. Fröjdh, H. E. Nilsson, P. Nelvig and C. S. Petersson, Simulation of the X-ray Response of Scintillator Coated Silicon CCDs, Trans. Nucl. Sci.
Vol. 45, No. 3, June 1998.
4. M. Duan, C. Fröjdh, G. Thungström, L. W. Wang, J. Linnros and C. S.
Petersson, Deposition Of Scintillating Layers of Bismuth Germanate (BGO) Films for X-ray detector applications, Trans. Nucl. Sci. Vol.
45, No. 3, June 1998.
5. C. Fröjdh, G. Thungström, H-E. Nilsson, C. S. Petersson, Schottky Barriers on 6H-SiC, Physica Scripta, T79, p. 297, 1999.
6. C. Fröjdh, U. Welander, H. Stamatakis, C. S. Petersson, New Sensors for Dental X-ray Imaging, Presented at the 6th International Workshop on GaAs detectors and related compounds, Prague 1998, NIM-A, Vol. 434, No. 1, 1999.
7. C. Fröjdh, W. Klamra, U. Welander, H. Stamatakis, H. E. Nilsson, and C.
S. Petersson,Imaging Properties of Scintillator Coated Silicon CCDs, Presented at NSS98, Toronto.
8. H-E. Nilsson, M. Hjelm, C. Fröjdh, C. Persson, U. Sannemo, C. S.
Petersson, Full Band Monte Carlo Simulation of Electron Transport in 6H-SiC, J. Appl. Phys. Vol. 86 No. 2, 1999.
9. H. C. Stamatakis, U. Welander, C. Fröjdh, C. S. Petersson, Development of New Sensors for Direct Digital Dental X-ray Imaging, Presented at XII International Congress of Dento-Maxillo-Facial Radiology, Osaka June 1999.
10. P. Kleimann, J. Linnros, C. Fröjdh, C. S. Petersson, An X-ray imaging pixel detector based on scintillator filled pores in a silicon matrix, Presented at the1st International Workshop on Radiation Imaging Detectors, Sweden, June 1999
11. P. Kleimann, J. Linnros, C. Fröjdh, C. S. Petersson, An X-ray imaging pixel detector based on a scintillating guides screen, Presented at NSS, Seattle, Oct. 1999, Submitted to Trans. on Nucl Sci.
12. M. A. Abdalla, C. Fröjdh, C. S. Petersson, A CMOS Read-out electronics for dental X-ray imaging using scintillator sensors, Presented at the 1st International Workshop on Radiation Imaging Detectors, Sweden, June 1999, Submitted to NIM-A.
13. C. Fröjdh, W. Klamra, U. Welander, H. C. Stamatakis, H. E. Nilsson, C. S.
Petersson, Imaging Properties of Scintillator Coated Silicon CCDs –
different scintillator materials and the effect of fibre optic face plates, Presented at the 1st International Workshop on Radiation Imaging
Detectors, Sweden, June 1999, Submitted to NIM-A.
14. C. Fröjdh, E. Dubaric, H-E. Nilsson, C. S. Petersson, Simulation of an X- ray detector based on a photodiode array fabricated in a scintillator filled grid structure, Presented at the 1st International Workshop on Radiation Imaging Detectors, Sweden, June 1999, Submitted to NIM-A..
Publications with Göran Thungström
1. G. Thungström, E.- J. van Veldhuizen, L. Westerberg, L.-O. Norlin and C. S. Petersson, Fabrication of an integrated E-E-silicon detector by wafer bonding using cobalt disilicide, Nucl. Instr. and Meth. in Phys. Res. A 391, 315, (1997)
2. H.J. Whitlow, T. Winzell and G. Thungström, Extremely Thin Silicon DE Detectors For Ion Beam Analysis, Nucl. Instr. and Meth.
in Phys. Res. B 136-138, 616, (1998)
3. G.Thungström, E. Dubaric and B. G. Svensson, Processing of silicon UV-photodetectors, (submitted for publication).
4. V. Aubry-Fortuna, J. L. Perrossier, M. Mamor, F. Meyer, C. Fröjdh, G.
Thungström, S. Bodnar, and J. L. Regolini, What is the role of the metal on the Fermi-level position at the interface with IV-IV compounds?, Microelectronic Engineering 37/38, (1997)
5. M. Duan, C. Fröjdh, G. Thungström, L. W. Wang, J. Linnros, and C. S.
Petersson, Deposition of Scintillating Layers of Bismuth Germanate (BGO) Films for X-ray detector applications, Presented at NSS-97, Submitted to Trans. on Nucl. Sci
6. C. Fröjdh, G. Thungström, H-E. Nilsson, and C. S. Petersson, Schottky Barriers on 6H-SiC, Physica Scripta, T79, 297, (1999)
7. K. Bertilsson, E. Dubaric, G. Thungström, H-E Nilsson, C.S. Petersson, Simulation of a low Atmospheric-Noise Four-Quadrant Position Sensitive Detector, in manuscript (2000)
