Order this document by BC546/D

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(2) . Order this document by BC546/D. SEMICONDUCTOR TECHNICAL DATA . . NPN Silicon. . . COLLECTOR 1 2 BASE 3 EMITTER 1. MAXIMUM RATINGS. 2. Symbol. BC 546. BC 547. BC 548. Unit. Collector – Emitter Voltage. VCEO. 65. 45. 30. Vdc. Collector – Base Voltage. VCBO. 80. 50. 30. Vdc. Emitter – Base Voltage. VEBO. 6.0. Vdc. Collector Current — Continuous. IC. 100. mAdc. Total Device Dissipation @ TA = 25°C Derate above 25°C. PD. 625 5.0. mW mW/°C. Total Device Dissipation @ TC = 25°C Derate above 25°C. PD. 1.5 12. Watt mW/°C. TJ, Tstg. – 55 to +150. °C. Characteristic. Symbol. Max. Unit. Thermal Resistance, Junction to Ambient. RqJA. 200. °C/W. Thermal Resistance, Junction to Case. RqJC. 83.3. °C/W. Rating. Operating and Storage Junction Temperature Range. 3. CASE 29–04, STYLE 17 TO–92 (TO–226AA). THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0). BC546 BC547 BC548. V(BR)CEO. 65 45 30. — — —. — — —. V. Collector – Base Breakdown Voltage (IC = 100 µAdc). BC546 BC547 BC548. V(BR)CBO. 80 50 30. — — —. — — —. V. Emitter – Base Breakdown Voltage (IE = 10 mA, IC = 0). BC546 BC547 BC548. V(BR)EBO. 6.0 6.0 6.0. — — —. — — —. V. Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125°C). BC546 BC547 BC548 BC546/547/548. — — — —. 0.2 0.2 0.2 —. 15 15 15 4.0. nA. ICES. µA. REV 1. Motorola Small–Signal Transistors, FETs and Diodes Device Data  Motorola, Inc. 1996. 1.

(3) . ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol. Min. Typ. Max. BC547A/548A BC546B/547B/548B BC548C. — — —. 90 150 270. — — —. (IC = 2.0 mA, VCE = 5.0 V). BC546 BC547 BC548 BC547A/548A BC546B/547B/548B BC547C/BC548C. 110 110 110 110 200 420. — — — 180 290 520. 450 800 800 220 450 800. (IC = 100 mA, VCE = 5.0 V). BC547A/548A BC546B/547B/548B BC548C. — — —. 120 180 300. — — —. — — —. 0.09 0.2 0.3. 0.25 0.6 0.6. —. 0.7. —. 0.55 —. — —. 0.7 0.77. 150 150 150. 300 300 300. — — —. Characteristic. Unit. ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V). hFE. Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (IC = 10 mA, IB = See Note 1). VCE(sat). Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA). VBE(sat). Base–Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V). VBE(on). —. V. V V. SMALL–SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz). fT BC546 BC547 BC548. MHz. Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz). Cobo. —. 1.7. 4.5. pF. Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz). Cibo. —. 10. —. pF. 125 125 125 240 450. — — 220 330 600. 500 900 260 500 900. — — —. 2.0 2.0 2.0. 10 10 10. Small–Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz). Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, f = 1.0 kHz, ∆f = 200 Hz). hfe BC546 BC547/548 BC547A/548A BC546B/547B/548B BC547C/548C. —. NF BC546 BC547 BC548. dB. Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V.. 2. Motorola Small–Signal Transistors, FETs and Diodes Device Data.

(4) . 1.0 VCE = 10 V TA = 25°C. 1.5. 0.8. 1.0 0.8 0.6 0.4. VBE(sat) @ IC/IB = 10. 0.7 VBE(on) @ VCE = 10 V. 0.6 0.5 0.4 0.3 0.2. 0.3. VCE(sat) @ IC/IB = 10. 0.1 0.2. 0.2. 0.5. 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc). 0 0.1. 200. 100. Figure 1. Normalized DC Current Gain. 50 70 100. θVB, TEMPERATURE COEFFICIENT (mV/ °C). 1.0 TA = 25°C. 1.6 IC = 200 mA 1.2 IC = IC = IC = 50 mA 10 mA 20 mA. IC = 100 mA. 0.8. 0.4. 0. 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc). Figure 2. “Saturation” and “On” Voltages. 2.0 VCE , COLLECTOR–EMITTER VOLTAGE (V). TA = 25°C. 0.9 V, VOLTAGE (VOLTS). hFE , NORMALIZED DC CURRENT GAIN. 2.0. 0.02. 10. 0.1 1.0 IB, BASE CURRENT (mA). –55°C to +125°C 1.2 1.6 2.0 2.4 2.8. 20. 10 1.0 IC, COLLECTOR CURRENT (mA). 0.2. Figure 3. Collector Saturation Region. 100. Figure 4. Base–Emitter Temperature Coefficient. 10. C, CAPACITANCE (pF). 7.0. TA = 25°C. 5.0. Cib. 3.0 Cob 2.0. 1.0. 0.4 0.6 0.8 1.0. 4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS). 20. 40. f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz). BC547/BC548. Figure 5. Capacitances. Motorola Small–Signal Transistors, FETs and Diodes Device Data. 400 300 200. VCE = 10 V TA = 25°C. 100 80 60 40 30 20 0.5 0.7. 1.0. 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc). 30. 50. Figure 6. Current–Gain – Bandwidth Product. 3.

(5) . BC547/BC548. TA = 25°C. VCE = 5 V TA = 25°C. 0.8 V, VOLTAGE (VOLTS). hFE , DC CURRENT GAIN (NORMALIZED). 1.0. 2.0 1.0 0.5. VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4. 0.2 0.2 VCE(sat) @ IC/IB = 10 0. 10 100 1.0 IC, COLLECTOR CURRENT (mA). 0.1 0.2. 0.2. 1.0. 0.5. 2.0. 100. 200. 50. 100. 200. –1.0 TA = 25°C. 1.6 20 mA. 50 mA. 100 mA. 200 mA. 1.2 IC = 10 mA. 0.8. 0.4. 0. 50. Figure 8. “On” Voltage. θVB, TEMPERATURE COEFFICIENT (mV/ °C). VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS). Figure 7. DC Current Gain. 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA). 0.02. 0.05. 0.1. 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA). 5.0. 10. –1.4. –1.8 θVB for VBE –55°C to 125°C. –2.2. –2.6. –3.0. 20. 0.2. Figure 9. Collector Saturation Region. 0.5. 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA). Figure 10. Base–Emitter Temperature Coefficient. BC546. f T, CURRENT–GAIN – BANDWIDTH PRODUCT. 40. C, CAPACITANCE (pF). TA = 25°C 20 Cib 10 6.0 Cob. 4.0. 2.0. 0.1. 0.2. 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS). Figure 11. Capacitance. 4. 50. 100. 500. VCE = 5 V TA = 25°C. 200 100 50. 20. 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA). Figure 12. Current–Gain – Bandwidth Product. Motorola Small–Signal Transistors, FETs and Diodes Device Data.

(6) . PACKAGE DIMENSIONS. A. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.. B. R P L. F. SEATING PLANE. K D J. X X G H V. C. 1. SECTION X–X. N N. CASE 029–04 (TO–226AA) ISSUE AD. Motorola Small–Signal Transistors, FETs and Diodes Device Data. DIM A B C D F G H J K L N P R V. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 –––. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 –––. STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER. 5.

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