Citation for the original published paper:
Donzel-Gargand, O., Thersleff, T., Keller, J., Törndahl, T., Larsson, F. et al. (2017) Cu-depleted patches induced by presence of K during growth of CIGS absorbers.
In:
N.B. When citing this work, cite the original published paper.
Permanent link to this version:
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-335110
Olivier Donzel-Gargand a
CIGS absorbers
Introduction
Results &
discussion Conclusion
Highlights
• no K during the CIGS co-evaporation
2 0,2 µm STEM ADF Cu
STEM ADF Cu
0.1 µm
CIGS layer
• K provided during the CIGS co-evaporation
Introduction
Results &
discussion Conclusion
CIGS co-evaporation profile
• Se in excess
• Ga-rich start
• Cu poor/rich/poor
Cu-rich
Introduction
Results &
discussion Conclusion
Sample description
• PDT: 350˚C
• 17% < η <18,4%
(without ARC)
4
Alkali barrier Mo
CIGS
CdS TCO
K-rich Glass
PDT:
none
PDT:
none / KF / RbF
Mo
CIGS
CdS TCO
K-rich Glass
NaF
Introduction
Results &
discussion Conclusion
Sample preparation
• Ga-based Focused Ion Beam (FIB)
– 30kV – 100pA – 5kV – 50pA
ion view
e- view
Introduction
Results &
discussion Conclusion
FIB damages
Cu -> Cd Cd -> Cu
6
After the intense repolish: (very close area)
0 . 1 µ m Cu
0 . 1 µ m
Cd
1
0 . 1 µ m
Cu
0 . 1 µ m
0 . 1 µ m