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Growth and characterization of SiC and GaN

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Linköping studies in science and technology. Dissertations, No. 1151

Errata

Growth and characterization of SiC and GaN

Rafal Ciechonski

Page 19, last line

p- low vapour pressure should read

p- working vapour pressure

Page 36, section 2.4.4, 4th line from the bottom

The sentence beginning “The Hall effect can be …” should read

The average drift velocity of the carriers, which depends on applied electric field, can be measured by the Hall effect technique.

page 43, last line before paragraph 3.2.2 C-V measurements (paper III). should read

References

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