Linköping studies in science and technology. Dissertations, No. 1151
Errata
Growth and characterization of SiC and GaN
Rafal Ciechonski
Page 19, last line
p- low vapour pressure should read
p- working vapour pressure
Page 36, section 2.4.4, 4th line from the bottom
The sentence beginning “The Hall effect can be …” should read
The average drift velocity of the carriers, which depends on applied electric field, can be measured by the Hall effect technique.
page 43, last line before paragraph 3.2.2 C-V measurements (paper III). should read