IRL530N
HEXFET
®Power MOSFET
S D
G
V
DSS= 100V R
DS(on)= 0.10Ω
I
D= 17A
TO-220AB
1/09/04
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current 60
PD @TC = 25°C Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy 150 mJ
IAR Avalanche Current 9.0 A
EAR Repetitive Avalanche Energy 7.9 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.9
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
Thermal Resistance Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
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Logic-Level Gate Drive
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Advanced Process Technology
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Dynamic dv/dt Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
IRL530N
Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.122 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.100 VGS = 10V, ID = 9.0A ––– ––– 0.120 Ω VGS = 5.0V, ID = 9.0A ––– ––– 0.150 VGS = 4.0V, ID = 8.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 7.7 ––– ––– S VDS = 25V, ID = 9.0A
––– ––– 25
µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100
nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Qg Total Gate Charge ––– ––– 34 ID = 9.0A
Qgs Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 20 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 7.2 ––– VDD = 50V
tr Rise Time ––– 53 –––
ns ID = 9.0A
td(off) Turn-Off Delay Time ––– 30 ––– RG = 6.0Ω, VGS = 5.0V
tf Fall Time ––– 26 ––– RD = 5.5Ω, See Fig. 10
Between lead, 6mm (0.25in.) from package
and center of die contact
Ciss Input Capacitance ––– 800 ––– VGS = 0V
Coss Output Capacitance ––– 160 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 90 ––– ƒ = 1.0MHz, See Fig. 5
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 3.7mH RG = 25Ω, IAS = 9.0A. (See Figure 12) .
Notes:
Electrical Characteristics @ T
J= 25°C (unless otherwise specified)
nH IGSS
S D
G
LS Internal Source Inductance ––– 7.5 –––
RDS(on) Static Drain-to-Source On-Resistance
LD Internal Drain Inductance ––– 4.5 –––
IDSS Drain-to-Source Leakage Current
ISD ≤ 9.0A, di/dt ≤ 540A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
S D
G
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol
(Body Diode) ––– –––
showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– –––
p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V trr Reverse Recovery Time ––– 140 210 ns TJ = 25°C, IF = 9.0A
Qrr Reverse RecoveryCharge ––– 740 1100 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A 17 60
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature
Fig 2. Typical Output Characteristics
0.1 1 1 0 1 0 0
0.1 1 1 0 1 0 0
I , Drain-to-Source Current (A)D
V , D rain-to-S ource V oltage (V )D S A 2 0µ s P U LS E W ID T H T = 2 5°CJ
VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
2 .5V
0.1 1 1 0 1 0 0
0.1 1 1 0 1 0 0
I , Drain-to-Source Current (A)D
V , D rain-to-S ource V oltage (V )D S A 2 0µ s P U LS E W ID T H T = 1 75 °C
VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
2.5 V
J
0 . 1 1 1 0 1 0 0
2 3 4 5 6 7 8 9 1 0
T = 2 5 °CJ
V , G ate-to -S o urce V oltag e (V )G S
DI , Drain-to-Source Current (A)
V = 5 0V
2 0µ s P U L S E W ID TH T = 1 7 5°CJ
A DS
0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0
- 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
T , J unc tion T em perature (°C )J R , Drain-to-Source On ResistanceDS(on) (Normalized)
V = 1 0V G S A I = 15 AD
IRL530N
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0 3 6 9 1 2 1 5
0 1 0 2 0 3 0 4 0 5 0
Q , T otal G ate C harge (nC )G V , Gate-to-Source Voltage (V) GS
V = 8 0V V = 5 0V V = 2 0V
D S D S D S
A F O R TE S T C IR C U IT S E E F IG U R E 1 3 I = 9.0 AD
1 1 0 1 0 0
0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4
T = 2 5°CJ
V = 0V G S
V , S o urc e-to -D ra in V o lta ge (V )
I , Reverse Drain Current (A)
S D
SD
A T = 17 5°CJ
1 1 0 1 0 0 1 0 0 0
1 1 0 1 0 0 1 0 0 0
V , D rain-to-S ource V oltage (V )D S
I , Drain Current (A)
O P E R A T IO N IN T H IS A R E A LIM IT E D B Y R
D
D S (o n )
1 0 µ s
1 0 0 µ s
1 m s
1 0 m s
A T = 25 °C
T = 17 5°C S ing le P u ls e
C J 0
2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0 1 4 0 0
1 1 0 1 0 0
C, Capacitance (pF)
V , D rain-to-S ourc e V oltage (V )D S A V = 0V , f = 1 M H z
C = C + C , C S H O R TE D C = C
C = C + C G S
iss g s g d d s rs s g d
o ss ds g d
C is s
C os s C rs s
0.01 0.1 1 10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t t DM
1 2
t , Rectangular Pulse Duration (sec)
Thermal Response(Z )
1
thJC
0.01 0.02 0.05 0.10 0.20 D = 0.50
SINGLE PULSE (THERMAL RESPONSE)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS 90%
10%
VGS
td(on) tr td(off) tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
5.0V
+
-VDD
25 50 75 100 125 150 175
0 5 10 15 20
T , Case Temperature ( C)
I , Drain Current (A)
C °
D
IRL530N
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
VDS L
D.U.T.
VDD
IAS
tp 0.01Ω
RG +
-
tp
VDS
IAS
VDD V(BR)DSS
5.0 V
QG
QGS QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
D.U.T. VDS
ID IG
3mA VGS
.3µF 50KΩ 12V .2µF
Current Regulator Same Type as D.U.T.
Current Sampling Resistors
+ -
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 13b. Gate Charge Test Circuit 5.0 V
0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0
2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5
J E , Single Pulse Avalanche Energy (mJ)AS
A S tarting T , J unc tion T em perature (°C ) V = 25 V
I TO P 3 .7A 6 .4A B O T T O M 9.0 A
D D
D
P.W. Period
di/dt Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop Re-Applied
Voltage Reverse Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD Driver Gate Drive
D.U.T. ISDWaveform
D.U.T. VDSWaveform
Inductor Curent
D = P.W.
Period
+ - +
+
- + -
-
Fig 14. For N-Channel HEXFETS
*
VGS = 5V for Logic Level DevicesPeak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test D.U.T Circuit Layout Considerations
• Low Stray Inductance • Ground Plane
• Low Leakage Inductance Current Transformer
*
IRL530N
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
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7+,6,6$1,5)
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Note: "P" in assembly line position indicates "Lead-Free"
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN - B -
1.32 (.052) 1.22 (.048)
3X0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185)
4.20 (.165)
3X 0.93 (.037) 0.69 (.027)
4.06 (.160) 3.55 (.140) 1.15 (.045) MIN 6.47 (.255) 6.10 (.240)
3.78 (.149) 3.54 (.139) - A - 10.54 (.415)
10.29 (.405) 2.87 (.113)
2.62 (.103)
15.24 (.600) 14.84 (.584)
14.09 (.555) 13.47 (.530)
3X1.40 (.055) 1.15 (.045)
2.54 (.100) 2X
0.36 (.014) M B A M 4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
HEXFET 1- GATE 2- DRAIN 3- SOURCE 4- DRAIN
LEAD ASSIGNMENTS IGBTs, CoPACK 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR
EXAMPLE:
INTHE ASSEMBLYLINE"C"
THIS IS ANIRF1010 LOT CODE 1789
ASSEMBLEDONWW19, 1997 PART NUMBER
ASSEMBLY LOT CODE
DATECODE YEAR7 = 1997
LINE C WEEK19 LOGO
RECTIFIER INTERNATIONAL
For GB Production
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/04 TO-220AB package is not recommended for Surface Mount Application.
