Errata for Magnetron Sputter Epitaxy of GaN

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Department of Physics Chemistry and Biology (IFM)

Linköping Studies in Science and Technology

Licentiate Thesis No. 1470

Errata for

Magnetron Sputter Epitaxy of GaN

Muhammad Junaid

March 3, 2011

1: Page 5: Corrected version of the table 2.1is given bellow.

Table 2.1: Important properties of GaN [5,10]

Material GaN

Lattice Parameters [Å] a = 3.189, c = 5.185 Band gap [eV] 3.42 at 300 K Density [g/cm3] 6.15 Electron Mobility [cm2/Vs] 1400 at 300 K Breakdown Voltage [V/cm] 5 x 106

2: Page 29: line # 6 from bottom ….films with thickness less than 200nm (not 1µm)…. 3: Paper 1, page # 6 and Paper 2, page # 9….. Y-axis in both ERDA graphs should be …X100

4: Paper 1, page # 7, in figure 2 indices in SAED pattern were marked wrong. Corrected figure is given bellow.

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5: Paper 2, page # 12 in table 1 values of

ε

_a_and

ε

_c_{were written in wrong columns.}

Corrected table is given below.

Measured Calculated

N2 Partial Pressure

and Peak Type a [Å] c [Å] c/a

ε

a

ε

c

ε

iso

*ε

a

*ε

c

9 mTorr

Strained 3.178 5.21 1.6394 -0.00345 0.00482 0.00226 -0.00571 0.00256

9 mTorr

Relaxed 3.181 5.192 1.6322 -0.00251 0.00135 0.00016 -0.00267 0.00119

6: Paper 2, page # 13, Surface roughness values were written wrong in the caption of figure 7. Corrected figure caption is….

Figure 7: AFM images. a) Surface morphology of a ~190 nm thick GaN layer grown at PN2 = 9 mTorr.

Surface features have a diameter of ~1µm, height of ~20 nm and surface RMS roughness value is ~6 nm. b) Surface morphology of a ~1100 nm thick GaN layer grown at PN2 = 9 mTorr. Surface features