• No results found

PC817XJ0000F Series

N/A
N/A
Protected

Academic year: 2022

Share "PC817XJ0000F Series"

Copied!
15
0
0

Loading.... (view fulltext now)

Full text

(1)

PC817XJ0000F Series

1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC817)

2. Package resin : UL flammability grade (94V-0)

■ Features

■ Agency approvals/Compliance

1. I/O isolation for MCUs (Micro Controller Units) 2. Noise suppression in switching circuits

3. Signal transmission between circuits of different po- tentials and impedances

■ Applications

DIP 4pin General Purpose Photocoupler

1. 4pin DIP package

2. Double transfer mold package (Ideal for Flow Solder- ing)

3. High collector-emitter voltage (VCEO:80V)

4. Current transfer ratio (CTR : MIN. 50% at IF=5 mA, VCE=5V)

5. Several CTR ranks available

6. High isolation voltage between input and output (Viso(rms) : 5.0 kV)

7. Lead-free and RoHS directive compliant

4-channel package type is also available.

(model No. PC847XJ0000F Series)

■ Description

PC817XJ0000F Series contains an IRED optically coupled to a phototransistor.

It is packaged in a 4pin DIP, available in wide-lead spacing option and SMT gullwing lead-form option.

Input-output isolation voltage(rms) is 5.0kV.

Collector-emitter voltage is 80V and CTR is 50% to 600% at input current of 5mA.

1 Sheet No.: D2-A03102EN

Date Jun. 30. 2005

© SHARP Corporation Notice The content of data sheet is subject to change without prior notice.

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

(2)

■ Internal Connection Diagram

Anode Cathode Emitter Collector

1

1 2 3 2 4

4

3

■ Outline Dimensions

(Unit : mm)

1. Through-Hole [ex. PC817XJ0000F] 2. SMT Gullwing Lead-Form [ex. PC817XIJ000F]

3. Wide Through-Hole Lead-Form [ex. PC817XFJ000F]

Product mass : approx. 0.22g Product mass : approx. 0.23g

Product mass : approx. 0.22g Product mass : approx. 0.23g

4. Wide SMT Gullwing Lead-Form [ex. PC817XFPJ00F]

6.5±0.5

7.62±0.3 4.58±0.5

θ θ

θ : 0 to 13˚

Epoxy resin

3.5±0.5 3.0±0.5 0.5TYP.

0.6±0.2

1.2±0.3

1

2 ±0.54.58

2.54±0.25

4

3

Anode mark Rank mark

Factory identification mark Date code

P C 8 1 7

2.7±0.5

0.5±0.1 0.26±0.1

0.6±0.21.2±0.3

6.5±0.5

7.62±0.3

0.26±0.1

4.58±0.5

2.54±0.25 Epoxy resin

3.5±0.5

4.58±0.5

2.54±0.25

4

3

Anode mark Rank mark

Factory identification mark Date code

1.0+0.4−0

1.0+0.4−0

10.0+0−0.5

0.35±0.25

1

2 P C 8 1 7

P C 8 1 7

4.58±0.5

0.6±0.21.2±0.3 1.0±0.1 2.54±0.25

6.5±0.5 Anode mark

Factory identification mark

Date code

4

3

7.62±0.3

10.16±0.5

0.26±0.1

4.58±0.5

0.5±0.1 Epoxy resin

3.5±0.5

2.7MIN.

Rank mark

1

2 P C 8 1 7

0.6±0.21.2±0.3 1.0±0.1

6.5±0.5

10.16±0.5 0.75±0.25 0.75±0.25

4.58±0.5

2.54±0.25

Anode mark Rank mark

Factory identification mark Date code

4

3

7.62±0.3

12.0MAX

4.58±0.5

Epoxy resin

3.5±0.5

0.26±0.1

0.5±0.1

0.25±0.25

1

2

(3)

Date code (2 digit)

Rank mark

Refer to the Model Line-up table A.D.

1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001

Mark A B C D E F H J K L M N

Mark P R S T U V W X A B C

Mark 1 2 3 4 5 6 7 8 9 O N D Month

January February

March April

May June July August September

October November December A.D

2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012

··· ···

2nd digit Month of production 1st digit

Year of production

Factory identification mark and Plating material

Factory identification Mark no mark

Country of origin

Japan

Indonesia China

Plating material

SnCu (Cu : TYP. 2%)

SnBi (Bi : TYP. 2%) SnCu (Cu : TYP. 2%)*

* Up to Date code "T4" (April 2005), SnBi (Bi : TYP. 2%).

** This factory marking is for identification purpose only.

Please contact the local SHARP sales representative to see the actural status of the production.

3 repeats in a 20 year cycle

Sheet No.: D2-A03102EN

(4)

■ Electro-optical Characteristics

Parameter Conditions

Forward voltage Peak forward voltage Reverse current

Collector dark current

Transfer characteristics

Collector current

Collector-emitter saturation voltage Isolation resistance Floating capacitance Cut-off frequency

MIN.

2.5

− 5×1010

TYP.

1.2

− 0.1 1×1011

0.6 80 4 3

MAX.

1.4 3.0 10

100

30.0 0.2

− 1.0

− 18 18

Unit V V µA

nA

mA V Ω pF kHz

µs µs Symbol

VF

VFM

IR

ICEO

IC

VCE (sat) RISO

fc

tr

tf Cf

Response time Rise time Fall time

IF=20mA IFM=0.5A VR=4V

Terminal capacitance Ct V=0, f=1kHz − 30 250 pF

VCE=50V, IF=0

IF=5mA, VCE=5V IF=20mA, IC=1mA

V=0, f=1MHz

VCE=2V, IC=2mA, RL=100Ω VCE=5V, IC=2mA, RL=100Ω, −3dB

DC500V, 40 to 60%RH

(Ta=25˚C)

Collector-emitter breakdown voltage BVCEO IC=0.1mA, IF=0 80 − − V

Emitter-collector breakdown voltage BVECO IE=10µA, IF=0 6 − − V

InputOutput

■ Absolute Maximum Ratings

(Ta=25˚C)

Parameter Symbol Unit

Input

Forward current mA

*1Peak forward current A

Power dissipation mW

Output

Collector-emitter voltage V

Emitter-collector voltage V

Collector current mA

Collector power dissipation mW

Total power dissipation mW

*2Isolation voltage

Operating temperature ˚C

Storage temperature ˚C

*3Soldering temperature

IF

IFM

P VCEO

VECO

IC PC

Ptot

Viso (rms)

Topr

Tstg

Tsol ˚C

*1 Pulse width≤100µs, Duty ratio : 0.001

*2 40 to 60%RH, AC for 1minute, f=60Hz

*3 For 10s

Rating 50

1

Reverse voltage VR 6 V

70 80 6 50 150 200

−30 to +100

−55 to +125 260

5.0 kV

(5)

Sheet No.: D2-A03102EN

Model Line-up

IC [mA]

(IF=5mA, VCE=5V, Ta=25˚C) Lead Form

Package Rank mark

with or without A B C D A or B B or C C or D A, B or C B, C or D A, B, C or D

2.5 to 30.0 4.0 to 8.0 6.5 to 13.0 10.0 to 20.0 15.0 to 30.0 4.0 to 13.0 6.5 to 20.0 10.0 to 30.0

4.0 to 20.0 6.5 to 30.0 4.0 to 30.0 Through-Hole

PC817XJ0000F PC817X1J000F PC817X2J000F PC817X3J000F PC817X4J000F PC817X5J000F PC817X6J000F PC817X7J000F PC817X8J000F PC817X9J000F PC817X0J000F

Wide Through-Hole

PC817XFJ000F PC817XF1J00F PC817XF2J00F PC817XF3J00F PC817XF4J00F PC817XF5J00F PC817XF6J00F PC817XF7J00F PC817XF8J00F PC817XF9J00F PC817XF0J00F Sleeve

100pcs/sleeve

Model No.

IC [mA]

(IF=5mA, VCE=5V, Ta=25˚C) Lead Form

Package Rank mark

with or without A B C D A or B B or C C or D A, B or C B, C or D A, B, C or D

2.5 to 30.0 4.0 to 8.0 6.5 to 13.0 10.0 to 20.0 15.0 to 30.0 4.0 to 13.0 6.5 to 20.0 10.0 to 30.0

4.0 to 20.0 6.5 to 30.0 4.0 to 30.0 PC817XIJ000F

PC817XI1J00F PC817XI2J00F PC817XI3J00F PC817XI4J00F PC817XI5J00F PC817XI6J00F PC817XI7J00F PC817XI8J00F PC817XI9J00F PC817XI0J00F

Taping

PC817XPJ000F PC817XP1J00F PC817XP2J00F PC817XP3J00F PC817XP4J00F PC817XP5J00F PC817XP6J00F PC817XP7J00F PC817XP8J00F PC817XP9J00F PC817XP0J00F

Wide SMT Gullwing

PC817XFPJ00F

− 2 000pcs/reel Sleeve

100pcs/sleeve

SMT Gullwing

Model No.

5

Please contact a local SHARP sales representative to inquire about production status.

(6)

100 10

1 0.1

Current transfer ratio CTR (%)

200 400

0 100 300 500

Forward current IF (mA) VCE=5V Ta=25˚C

Fig.6 Current Transfer Ratio vs. Forward Current

Duty ratio

Pulse width≤100µs Ta=25˚C

10 100

10−3 10−2 10−1

Peak forward current IFM (mA)

1 10 000

1 000

Fig.5 Peak Forward Current vs. Duty Ratio

Forward current IF (mA)

Ambient temperature Ta (˚C) 0

50

40

30

20

10

−30 0 25 50 55 75 100 125

Fig.1 Forward Current vs. Ambient Temperature

Diode power dissipation P (mW)

Ambient temperature Ta (˚C) 0

100

80 70 60

40

20

−30 0 25 50 55 75 100 125

Fig.2 Diode Power Dissipation vs.

Ambient Temperature

Collector power dissipation PC (mW)

Ambient temperature Ta (˚C) 0

250

200

150

100

50

−30 0 25 50 75 100 125

Fig.3 Collector Power Dissipation vs.

Ambient Temperature

Fig.4 Total Power Dissipation vs. Ambient Temperature

Total Power dissipation Ptot (mW)

Ambient temperature Ta (˚C) 0

250

200

150

100

50

−30 0 25 50 75 100 125

(7)

Sheet No.: D2-A03102EN Collector-emitter saturation voltage VCE (sat) (V)

Forward current IF (mA) 0

0 1 2 3 4 5

5 10

6

15 7mA

1mA 3mA 5mA IC=0.5mA

Ta=25˚C

Fig.12 Collector-emitter Saturation Voltage vs. Forward Current

80 60 40 20

−30 0 100

10−5

10−6

10−7

10−8

10−9

10−10

10−11 Collector dark current ICEO (A)

Ambient temperature Ta (˚C) VCE=50V

Fig.11 Collector Dark Current vs. Ambient Temperature

Relative current transfer ratio (%)

0 150

100

50

−40 −20 0 20 40 60 80 100

Ambient temperature Ta (˚C) IF=1mA,VCE=5V

IF=5mA,VCE=5V

Fig.9 Relative Current Transfer Ratio vs.

Ambient Temperature

0 0.02 0.04 0.06 0.08 0.1 0.12 0.14

Collector-emitter saturation voltage VCE (sat) (V)

IF=20mA IC=1mA

Ambient temperature Ta (˚C)

−40 −20 0 20 40 60 80 100

Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature

7

50˚C 25˚C

0˚C

0 2

0.5 1 1.5 2 2.5 3 3.5

5 10 20 50 100

1

−25˚C Ta=75˚C

Forward current IF (mA)

Forward voltage VF (V)

Fig.7 Forward Current vs. Forward Voltage

0 0 5

1 10 15 20 25 30

2 3 4 5 6 7 8 9

20mA

10mA

5mA Collector current IC (mA)

Collector-emitter voltage VCE (V) IF=30mA

PC (MAX.) Ta=25˚C

Fig.8 Collector Current vs. Collector-emitter

Voltage

(8)

Frequency f (kHz)

−20 0

1

−10

100 10

1kΩ 100Ω

Voltage gain Av (dB)

RL=10kΩ

VCE=5V IC=2mA Ta=25˚C

Fig.15 Frequency Response

VCC

RL Output

Please refer to the conditions in Fig.15.

RD

VCE

Fig.16 Test Circuit for Frequency Response

Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.

VCC

tf

tr

ts

90%

10%

td

Output Input

RL

Input RD Output

Please refer to the conditions in Fig.13.

VCE

Fig.14 Test Circuit for Response Time Fig.13 Response Time vs. Load Resistance

0.01 0.1 1 10

10

0.1 1 100

Response time (µs)

VCE=2V IC=2mA Ta=25˚C

ts

td

tf

tr

Load resistance RL (kΩ)

(9)

Sheet No.: D2-A03102EN

■ Design Considerations

While operating at IF<1.0mA, CTR variation may increase.

Please make design considering this fact.

This product is not designed against irradiation and incorporates non-coherent IRED.

● Degradation

In general, the emission of the IRED used in photocouplers will degrade over time.

In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration.

● Recommended Foot Print (reference)

✩ For additional design assistance, please review our corresponding Optoelectronic Application Notes.

9

SMT Gullwing Lead-form Wide SMT Gullwing Lead-form

10.2

2.54 1.7

2.2 8.2

2.54 1.7

2.2

(Unit : mm)

● Design guide

(10)

■ Manufacturing Guidelines

Reflow Soldering:

Reflow soldering should follow the temperature profile shown below.

Soldering should not exceed the curve of temperature profile and time.

Please don't solder more than twice.

● Soldering Method

Flow Soldering :

Due to SHARP's double transfer mold construction submersion in flow solder bath is allowed under the below listed guidelines.

Flow soldering should be completed below 270˚C and within 10s.

Preheating is within the bounds of 100 to 150˚C and 30 to 80s.

Please don't solder more than twice.

Hand soldering

Hand soldering should be completed within 3s when the point of solder iron is below 400˚C.

Please don't solder more than twice.

Other notices

Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the tooling and soldering conditions.

1 2 3 4

300

200

100

00 (˚C)

Terminal : 260˚C peak

( package surface : 250˚C peak)

Preheat

150 to 180˚C, 120s or less

Reflow

220˚C or more, 60s or less

(min)

(11)

Sheet No.: D2-A03102EN

Solvent cleaning:

Solvent temperature should be 45˚C or below Immersion time should be 3 minutes or less

Ultrasonic cleaning:

The impact on the device varies depending on the size of the cleaning bath, ultrasonic output, cleaning time, size of PCB and mounting method of the device.

Therefore, please make sure the device withstands the ultrasonic cleaning in actual conditions in advance of mass production.

Recommended solvent materials:

Ethyl alcohol, Methyl alcohol and Isopropyl alcohol

In case the other type of solvent materials are intended to be used, please make sure they work fine in ac- tual using conditions since some materials may erode the packaging resin.

● Cleaning instructions

This product shall not contain the following materials.

And they are not used in the production process for this product.

Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all.

This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).

•Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated di- phenyl ethers (PBDE).

● Presence of ODC

11

(12)

■ Package specification

12.0

6.7

5.8 10.8

15.0

6.35

5.9 10.8

520±2

520±2

● Sleeve package

1. Through-Hole or SMT Gullwing Lead-Form Package materials

Sleeve : HIPS (with anti-static material) Stopper : Styrene-Elastomer

Package method

MAX. 100pcs of products shall be packaged in a sleeve.

Both ends shall be closed by tabbed and tabless stoppers.

The product shall be arranged in the sleeve with its anode mark on the tabless stopper side.

MAX. 20 sleeves in one case.

Sleeve outline dimensions

(Unit : mm)

(Unit : mm)

2. Wide Through-Hole Lead-Form or Wide SMT Gullwing Lead-Form Package materials

Sleeve : HIPS (with anti-static material) Stopper : Styrene-Elastomer

Package method

MAX. 100pcs of products shall be packaged in a sleeve.

Both ends shall be closed by tabbed and tabless stoppers.

The product shall be arranged in the sleeve with its anode mark on the tabless stopper side.

MAX. 20 sleeves in one case.

Sleeve outline dimensions

(13)

Sheet No.: D2-A03102EN

13

● Tape and Reel package 1. SMT Gullwing

Package materials

Carrier tape : PS

Cover tape : PET (three layer system) Reel : PS

Carrier tape structure and Dimensions

F

K

E I

D J

G

B

H H

A

C

MAX.

Dimensions List (Unit : mm)

A 16.0±0.3

B 7.5±0.1

C 1.75±0.1

D 8.0±0.1

E 2.0±0.1 H

10.4±0.1 I 0.4±0.05

J 4.2±0.1

K 5.1±0.1

F 4.0±0.1

G φ1.5 −0+0.1

a

c

e

g

f b d

Dimensions List (Unit : mm) a

330

b 17.5±1.5

c 100±1.0

d 13±0.5 e

23±1.0

f 2.0±0.5

g 2.0±0.5

Pull-out direction

[Packing : 2 000pcs/reel]

Reel structure and Dimensions

Direction of product insertion

(14)

2. Wide SMT Gullwing Package materials

Carrier tape : PS

Cover tape : PET (three layer system) Reel : PS

Carrier tape structure and Dimensions

Dimensions List A

24.0±0.3 B 11.5±0.1

C 1.75±0.1

D 8.0±0.1

E 2.0±0.1 H

12.4±0.1 I 0.4±0.05

J 4.1±0.1

K 5.1±0.1

F 4.0±0.1

G φ1.5 −0+0.1

(Unit : mm)

J

G I

E C

B A

H H

MAX.

F D

K

a

c

e

g

f b d

Dimensions List (Unit : mm) a

330

b 25.5±1.5

c 100±1.0

d 13±0.5 e

23±1.0

f 2.0±0.5

g 2.0±0.5

Pull-out direction

[Packing : 2 000pcs/reel]

Reel structure and Dimensions

Direction of product insertion

(15)

· The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights.

SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices.

· Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

SHARP reserves the right to make changes in the s p e c i f i c a t i o n s , c h a r a c t e r i s t i c s , d a t a , m a t e r i a l s , structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice.

· Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions:

(i) The devices in this publication are designed for use in general electronic equipment designs such as:

--- Personal computers

--- Office automation equipment

--- Telecommunication equipment [terminal]

--- Test and measurement equipment --- Industrial control

--- Audio visual equipment --- Consumer electronics

(ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection

with equipment that requires higher reliability such as:

--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)

--- Traffic signals

--- Gas leakage sensor breakers --- Alarm equipment

--- Various safety devices, etc.

( i i i ) S H A R P d e v i c e s s h a l l n o t b e u s e d f o r o r i n connection with equipment that requires an extremely high level of reliability and safety such as:

--- Space applications

--- Telecommunication equipment [trunk lines]

--- Nuclear power control equipment

--- Medical and other life support equipment (e.g., scuba).

· If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices.

· This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party.

· Contact and consult with a SHARP representative if there are any questions about the contents of this publication.

15

Sheet No.: D2-A03102EN

■ Important Notices

[E178]

References

Related documents

In stand-by mode the phone is only active when updating the information – so called periodic location update – and contact with the base station occurs with a frequency set by the net

This also allows base space products (or rather, dual space convolutions) to be realised in O(N log N ) time: first, apply the inverse Fourier transform using FFT, second, perform

Following the seminal works [3–5], the asymptotic symmetry group of four-dimensional asymptotically flat gravity, and later of spin-one gauge theories [6–9], was long identified

För att uppskatta den totala effekten av reformerna måste dock hänsyn tas till såväl samt- liga priseffekter som sammansättningseffekter, till följd av ökad försäljningsandel

Från den teoretiska modellen vet vi att när det finns två budgivare på marknaden, och marknadsandelen för månadens vara ökar, så leder detta till lägre

Dessa företag efterlyser stöd från Läkemedelsverket bland annat kring hur olika delar av regelverket ska tolkas, exempelvis vad gäller hur olika produkter kommer att klas-

1 thorized to administer oaths and subpena witnesses, who shall.. 2 be entitled to receive the same fees as witnesses in the

DEVELOPMENTAL PLASTICITY OF THE GLUTAMATE SYNAPSE: ROLES OF LOW FREQUENCY STIMULATION, HEBBIAN INDUCTION AND THE NMDA RECEPTOR Joakim Strandberg Department of Physiology, Institute